onsemi FGH75T65SHDTLN4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 181-1867
- Mfr. Part No.:
- FGH75T65SHDTLN4
- Manufacturer:
- onsemi
Discontinued product
- RS Stock No.:
- 181-1867
- Mfr. Part No.:
- FGH75T65SHDTLN4
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 150 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 455 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5.2 x 22.74mm |
| Gate Capacitance | 3710pF |
| Minimum Operating Temperature | -55 °C |
| Energy Rating | 160mJ |
| Maximum Operating Temperature | +175 °C |