MOSFET Vishay SI7956DP-T1-GE3
- RS Stock No.:
- 180-7886
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Manufacturer:
- Vishay
3000 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$23.038
| Units | Per unit | Per Pack* |
| 5 - 745 | HK$23.038 | HK$115.19 |
| 750 - 1495 | HK$22.462 | HK$112.31 |
| 1500 + | HK$22.118 | HK$110.59 |
| *price indicative | ||
- RS Stock No.:
- 180-7886
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dual MOSFET for space savings
• Halogen free
• Lead (Pb) free component
• Low on-resistance in new low thermal resistance PowerPAK package
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Halogen free
• Lead (Pb) free component
• Low on-resistance in new low thermal resistance PowerPAK package
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Half bridge and forward converters
• High efficiency primary side switches
• High efficiency primary side switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.