MOSFET Vishay SIR882ADP-T1-GE3
- RS Stock No.:
- 180-7871
- Mfr. Part No.:
- SIR882ADP-T1-GE3
- Manufacturer:
- Vishay
2995 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$17.826
| Units | Per unit | Per Pack* |
| 5 - 745 | HK$17.826 | HK$89.13 |
| 750 - 1495 | HK$17.382 | HK$86.91 |
| 1500 + | HK$17.116 | HK$85.58 |
| *price indicative | ||
- RS Stock No.:
- 180-7871
- Mfr. Part No.:
- SIR882ADP-T1-GE3
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 8.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 60A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET for fast switching
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET for fast switching
Applications
• DC/DC primary side switch
• Industrial sites
• Telecom/server 48V, full/half-bridge DC/DC
• Industrial sites
• Telecom/server 48V, full/half-bridge DC/DC
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.