MOSFET Vishay SIS412DN-T1-GE3
- RS Stock No.:
- 180-7358
- Mfr. Part No.:
- SIS412DN-T1-GE3
- Manufacturer:
- Vishay
3000 In stock for delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$2.314
| Units | Per unit | Per Reel* |
| 3000 - 12000 | HK$2.314 | HK$6,942.00 |
| 15000 + | HK$2.268 | HK$6,804.00 |
| *price indicative | ||
- RS Stock No.:
- 180-7358
- Mfr. Part No.:
- SIS412DN-T1-GE3
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 24mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 10W and continuous drain current of 12A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Load switches
• Notebook PCs
• System power
• Notebook PCs
• System power
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• BS EN 61340-5-1:2007
• Rg tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.