STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 168-8740
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 31/03/2025, delivery within 3 working days
Added
Price Each (In a Tube of 30)
HK$48.726
| Units | Per unit | Per Tube* |
| 30 - 120 | HK$48.726 | HK$1,461.78 |
| 150 + | HK$43.853 | HK$1,315.59 |
| *price indicative | ||
- RS Stock No.:
- 168-8740
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- KR
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 469 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |