IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B

  • RS Stock No. 168-4761
  • Mfr. Part No. IXDN55N120D1
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 450 W
Package Type SOT-227B
Mounting Type Surface Mount
Channel Type N
Pin Count 4
Switching Speed 1MHz
Transistor Configuration Single
Length 38.2mm
Width 25.07mm
Height 9.6mm
Dimensions 38.2 x 25.07 x 9.6mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
120 In stock for delivery within 3 working days
Price Each (In a Tube of 10)
HK$ 267.857
(exc. GST)
units
Per unit
Per Tube*
10 +
HK$267.857
HK$2,678.57
*price indicative
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