IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B

  • RS Stock No. 168-4760
  • Mfr. Part No. IXYN100N120B3H1
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 165 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 690 W
Package Type SOT-227B
Mounting Type Surface Mount
Channel Type N
Pin Count 4
Switching Speed 5 → 30kHz
Transistor Configuration Single
Length 38.23mm
Width 25.07mm
Height 9.6mm
Dimensions 38.23 x 25.07 x 9.6mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
On back order for despatch 20/12/2019, delivery within 3 working days
Price Each (In a Tube of 10)
HK$ 232.06
(exc. GST)
Per unit
Per Tube*
10 +
*price indicative