IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247

  • RS Stock No. 168-4435
  • Mfr. Part No. IXGH40N120B2D1
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.26mm
Width 5.3mm
Height 21.46mm
Dimensions 16.26 x 5.3 x 21.46mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
On back order for despatch 20/12/2019, delivery within 3 working days
Price Each (In a Tube of 30)
HK$ 126.976
(exc. GST)
units
Per unit
Per Tube*
30 +
HK$126.976
HK$3,809.28
*price indicative
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