- RS Stock No.:
- 166-3807
- Mfr. Part No.:
- ISL9V2040D3ST
- Manufacturer:
- onsemi
On back order for despatch 10/01/2025, delivery within 3 working days
Added
Price Each (On a Reel of 2500)
HK$8.064
Units | Per unit | Per Reel* |
2500 - 2500 | HK$8.064 | HK$20,160.00 |
5000 - 7500 | HK$7.903 | HK$19,757.50 |
10000 + | HK$7.745 | HK$19,362.50 |
*price indicative |
- RS Stock No.:
- 166-3807
- Mfr. Part No.:
- ISL9V2040D3ST
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 450 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 130 W |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 6.73 x 6.22 x 2.39mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |