- RS Stock No.:
- 166-2176
- Mfr. Part No.:
- FGP20N60UFDTU
- Manufacturer:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (In a Tube of 50)
HK$19.845
Units | Per unit | Per Tube* |
50 - 50 | HK$19.845 | HK$992.25 |
100 - 150 | HK$19.414 | HK$970.70 |
200 + | HK$18.982 | HK$949.10 |
*price indicative |
- RS Stock No.:
- 166-2176
- Mfr. Part No.:
- FGP20N60UFDTU
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 165 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 4.83 x 16.51mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |