onsemi FGP20N60UFDTU IGBT, 40 A 600 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 166-2176
- Mfr. Part No.:
- FGP20N60UFDTU
- Manufacturer:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (In a Tube of 50)
HK$19.845
| Units | Per unit | Per Tube* |
| 50 - 50 | HK$19.845 | HK$992.25 |
| 100 - 150 | HK$19.414 | HK$970.70 |
| 200 + | HK$18.982 | HK$949.10 |
| *price indicative | ||
- RS Stock No.:
- 166-2176
- Mfr. Part No.:
- FGP20N60UFDTU
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 165 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.67 x 4.83 x 16.51mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |