ON Semiconductor ISL9V2540S3ST IGBT, 15.5 A 450 V, 3-Pin D2PAK (TO-263)

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 15.5 A
Maximum Collector Emitter Voltage 450 V
Maximum Gate Emitter Voltage ±14V
Maximum Power Dissipation 166.7 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.67mm
Width 9.65mm
Height 4.83mm
Dimensions 10.67 x 9.65 x 4.83mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
On back order for despatch 12/11/2019, delivery within 3 working days
Price Each (On a Reel of 800)
HK$ 11.578
(exc. GST)
units
Per unit
Per Reel*
800 +
HK$11.578
HK$9,262.40
*price indicative
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