Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263)

  • RS Stock No. 166-1187
  • Mfr. Part No. IGB30N60H3ATMA1
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
COO (Country of Origin): MY
Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 187 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3+Tab
Transistor Configuration Single
Length 10.31mm
Width 9.45mm
Height 4.57mm
Dimensions 10.31 x 9.45 x 4.57mm
Minimum Operating Temperature -40 °C
Energy Rating 1.55mJ
Gate Capacitance 1630pF
Maximum Operating Temperature +175 °C
Temporarily out of stock - back order for despatch when stock is available
Price Each (On a Reel of 1000)
HK$ 12.07
(exc. GST)
units
Per unit
Per Reel*
1000 +
HK$12.07
HK$12,070.00
*price indicative
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