STMicroelectronics STGB20N40LZ IGBT, 25 A 425 V, 3-Pin D2PAK (TO-263)

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 25 A
Maximum Collector Emitter Voltage 425 V
Maximum Gate Emitter Voltage 16V
Maximum Power Dissipation 150 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.4mm
Width 9.35mm
Height 4.6mm
Dimensions 10.4 x 9.35 x 4.6mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
On back order for despatch 11/02/2020, delivery within 3 working days
Price Each (On a Reel of 1000)
HK$ 9.93
(exc. GST)
Per unit
Per Reel*
1000 +
*price indicative