Infineon IKZ75N65EH5XKSA1 P-Channel IGBT, 90 A 650 V, 4-Pin TO-247

  • RS Stock No. 162-3291
  • Mfr. Part No. IKZ75N65EH5XKSA1
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

Extremely low control inductance loop
Emitter pin for driver feedback
Same creepage distance of collector emitter as standard TO-247 package
20% reduction in total switching losses compared to TO-247 package using same technology
System efficiency improvement compared to standard TO-247
Benefit increase at high current conditions
IGBTs operates under lower junction temperature
Much less power dissipation under overcurrent conditions

Specifications
Attribute Value
Maximum Continuous Collector Current 90 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 395 W
Number of Transistors 1
Package Type TO-247
Mounting Type Through Hole
Channel Type P
Pin Count 4
Switching Speed 100kHz
Transistor Configuration Single
Length 16.3mm
Width 5.21mm
Height 21.1mm
Dimensions 16.3 x 5.21 x 21.1mm
Energy Rating 1.11
Gate Capacitance 4300pF
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
90 In stock for delivery within 3 working days
Price Each (In a Tube of 30)
HK$ 57.781
(exc. GST)
units
Per unit
Per Tube*
30 - 120
HK$57.781
HK$1,733.43
150 - 270
HK$50.15
HK$1,504.50
300 - 570
HK$47.886
HK$1,436.58
600 +
HK$44.602
HK$1,338.06
*price indicative
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