ON Semiconductor FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 120 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 298 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.8mm
Width 5mm
Height 20.1mm
Dimensions 15.8 x 5 x 20.1mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
390 In stock for delivery within 3 working days
Price Each (In a Tube of 30)
HK$ 38.451
(exc. GST)
units
Per unit
Per Tube*
30 +
HK$38.451
HK$1,153.53
*price indicative
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