ON Semiconductor NGTG12N60TF1G IGBT, 88 (Pulse) A 600 V, 3-Pin TO-3PF

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 88 (Pulse) A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 54 W
Package Type TO-3PF
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.5mm
Width 5.5mm
Height 26.5mm
Dimensions 15.5 x 5.5 x 26.5mm
Maximum Operating Temperature +150 °C
300 In stock for delivery within 3 working days
Price Each (In a Tube of 30)
HK$ 12.043
(exc. GST)
units
Per unit
Per Tube*
30 +
HK$12.043
HK$361.29
*price indicative
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