Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247

  • RS Stock No. 144-1201
  • Mfr. Part No. IKW30N65ES5XKSA1
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 62 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20 V, ±30 (Transient) V
Maximum Power Dissipation 188 W
Number of Transistors 1
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 30kHz
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Gate Capacitance 1800pF
Maximum Operating Temperature +175 °C
Energy Rating 0.88mJ
Minimum Operating Temperature -40 °C
310 In stock for delivery within 3 working days
Price Each (In a Pack of 10)
HK$ 31.15
(exc. GST)
units
Per unit
Per Pack*
10 +
HK$31.15
HK$311.50
*price indicative