IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole
- RS Stock No.:
- 125-8050
- Mfr. Part No.:
- IXXK100N60C3H1
- Manufacturer:
- IXYS
48 In stock for delivery within 3 working days
Added
Price Each
HK$194.74
| Units | Per unit |
| 1 + | HK$194.74 |
- RS Stock No.:
- 125-8050
- Mfr. Part No.:
- IXXK100N60C3H1
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 695 W |
| Number of Transistors | 1 |
| Package Type | TO-264 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 20 → 60kHz |
| Transistor Configuration | Single |
| Dimensions | 20.3 x 5.3 x 26.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Energy Rating | 600mJ |