Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247

  • RS Stock No. 124-8810
  • Mfr. Part No. IKW50N60H3FKSA1
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 333 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Energy Rating 2.55mJ
Gate Capacitance 2960pF
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
Stock check temporarily unavailable - call for stock availability
Price Each (In a Tube of 30)
HK$ 36.475
(exc. GST)
units
Per unit
Per Tube*
30 - 30
HK$36.475
HK$1,094.25
60 - 120
HK$35.173
HK$1,055.19
150 - 270
HK$34.002
HK$1,020.06
300 +
HK$32.937
HK$988.11
*price indicative
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