onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 124-1334
- Mfr. Part No.:
- FGH40N60SFDTU
- Manufacturer:
- onsemi
30 In stock for delivery within 3 working days
Added
Price Each (In a Tube of 30)
HK$30.296
| Units | Per unit | Per Tube* |
| 30 - 30 | HK$30.296 | HK$908.88 |
| 60 - 90 | HK$29.637 | HK$889.11 |
| 120 + | HK$28.979 | HK$869.37 |
| *price indicative | ||
- RS Stock No.:
- 124-1334
- Mfr. Part No.:
- FGH40N60SFDTU
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 290 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |