IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD

  • RS Stock No. 194-899
  • Mfr. Part No. IXGH32N170
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1700 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247AD
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.26mm
Width 5.3mm
Height 21.46mm
Dimensions 16.26 x 5.3 x 21.46mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
98 In stock for delivery within 3 working days
Price Each
HK$ 136.37
(exc. GST)
Per unit
1 - 4
5 - 19
20 - 49
50 - 99
100 +