IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268

  • RS Stock No. 192-635
  • Mfr. Part No. IXGT30N120B3D1
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 1200 V
Package Type TO-268
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Length 16.05mm
Width 14mm
Height 5.1mm
Dimensions 16.05 x 14 x 5.1mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
On back order for despatch 20/12/2019, delivery within 3 working days
Price Each
HK$ 58.29
(exc. GST)
units
Per unit
1 - 4
HK$58.29
5 - 19
HK$56.06
20 - 49
HK$54.05
50 - 99
HK$52.25
100 +
HK$50.94
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