Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH

  • RS Stock No. 184-521
  • Mfr. Part No. GT60J323(Q)
  • Manufacturer Toshiba
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Package Type TO-3PLH
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 20.5mm
Width 5.2mm
Height 26mm
Dimensions 20.5 x 5.2 x 26mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
14 Within 3 working day(s) (Global stock)
5 Within 3 working day(s) (Global stock)
Price Each
HK$ 55.29
(exc. GST)
units
Per unit
1 - 19
HK$55.29
20 - 49
HK$53.36
50 - 99
HK$47.99
100 +
HK$47.34
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