Infineon FP25R12KE3BOSA1, EconoPIM2 3 Phase Bridge IGBT Module, 40 A max, 1200 V, PCB Mount

  • RS Stock No. 752-8312
  • Mfr. Part No. FP25R12KE3BOSA1
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type PCB Mount
Package Type EconoPIM2
Pin Count 24
Maximum Power Dissipation 150 W
Dimensions 107.5 x 45 x 17mm
Height 17mm
Length 107.5mm
Maximum Operating Temperature +125 °C
Width 45mm
Minimum Operating Temperature -40 °C
11 In stock for delivery within 3 working days
Price Each
HK$ 598.52
(exc. GST)
units
Per unit
1 - 1
HK$598.52
2 - 4
HK$575.50
5 +
HK$554.94