- RS Stock No.:
- 747-1046
- Mfr. Part No.:
- 6MBi100VA-120-50
- Manufacturer:
- Fuji Electric
Discontinued product
- RS Stock No.:
- 747-1046
- Mfr. Part No.:
- 6MBi100VA-120-50
- Manufacturer:
- Fuji Electric
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules 6-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
Note
Maximum collector current (Ic) values are stated per transistor within the module.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 520 W |
Configuration | 3 Phase Bridge |
Package Type | M636 |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 28 |
Transistor Configuration | 3 Phase |
Dimensions | 107.5 x 45 x 17mm |
Maximum Operating Temperature | +150 °C |