DAWIN DM2G200SH6N, 7DM-2, N-Channel Series IGBT Module, 250 A max, 600 V, Screw Mount
- RS Stock No.:
- 742-3283
- Mfr. Part No.:
- DM2G200SH6N
- Manufacturer:
- DAWIN Electronics
Discontinued product
- RS Stock No.:
- 742-3283
- Mfr. Part No.:
- DM2G200SH6N
- Manufacturer:
- DAWIN Electronics
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- KR
Product Details
IGBT Modules, DAWIN Electronics
DAWIN's Insulated Gate Bipolar Transistor (IGBT) Modules offer superior electrical performance in a wide range of industry standards. IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness.
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 250 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 695 W |
| Package Type | 7DM-2 |
| Configuration | Series |
| Mounting Type | Screw Mount |
| Channel Type | N |
| Pin Count | 7 |
| Dimensions | 94 x 48 x 30mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |