Fuji Electric 7MBP50RA-120-55, P 610 , N-Channel 3 Phase IGBT Module, 50 A max, 1200 V, PCB Mount
- RS Stock No.:
- 716-5618
- Mfr. Part No.:
- 7MBP50RA-120-55
- Manufacturer:
- Fuji Electric
Discontinued product
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 716-5618
- Mfr. Part No.:
- 7MBP50RA-120-55
- Manufacturer:
- Fuji Electric
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Power Dissipation | 357 W |
| Package Type | P 610 |
| Configuration | 3 Phase |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 22 |
| Transistor Configuration | 3 Phase |
| Dimensions | 109 x 88 x 22mm |
| Maximum Operating Temperature | +100 °C |
| Minimum Operating Temperature | -20 °C |