Semikron SKM200GB12E4 Dual Half Bridge IGBT Module, 314 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

RS Stock No.:: 687-4973
Mfr. Part No.:: SKM200GB12E4
Manufacturer:: Semikron

Semikron SKM200GB12E4 Dual Half Bridge IGBT Module, 314 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

1 In stock for delivery within 3 working days

Added

Price Each

HK$1,375.01

Units	Per unit
1 - 4	HK$1,375.01
5 - 9	HK$1,340.64
10 - 49	HK$1,313.83
50 - 99	HK$1,287.55
100 +	HK$1,261.80

RS Stock No.:: 687-4973
Mfr. Part No.:: SKM200GB12E4
Manufacturer:: Semikron

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	314 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Package Type	SEMITRANS3
Configuration	Dual Half Bridge
Mounting Type	Panel Mount
Channel Type	N
Pin Count	7
Transistor Configuration	Series
Dimensions	106.4 x 61.4 x 30mm
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+175 °C