Semikron SKM200GB126D, SEMITRANS3 Dual Half Bridge IGBT Module, 260 A max, 1200 V, Panel Mount

  • RS Stock No. 468-2460
  • Mfr. Part No. SKM200GB126D
  • Manufacturer Semikron
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): DE
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

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IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Dual Half Bridge
Transistor Configuration Series
Maximum Continuous Collector Current 260 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS3
Pin Count 7
Dimensions 106.4 x 61.4 x 30mm
Height 30mm
Length 106.4mm
Maximum Operating Temperature +150 °C
Width 61.4mm
Minimum Operating Temperature -40 °C
36 In stock for delivery within 3 working days
Price Each
HK$ 1,490.79
(exc. GST)
units
Per unit
1 - 1
HK$1,490.79
2 - 4
HK$1,311.57
5 - 9
HK$1,192.96
10 - 19
HK$1,119.53
20 +
HK$1,044.25
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