Semikron SKM200GB125D, SEMITRANS3 Dual Half Bridge IGBT Module, 200 A max, 1200 V, Panel Mount

  • RS Stock No. 468-2454
  • Mfr. Part No. SKM200GB125D
  • Manufacturer Semikron
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): DE
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

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IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Series
Configuration Dual Half Bridge
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS3
Pin Count 3
Dimensions 106.4 x 61.4 x 30.5mm
Height 30.5mm
Length 106.4mm
Maximum Operating Temperature +150 °C
Width 61.4mm
Minimum Operating Temperature -40 °C
131 In stock for delivery within 3 working days
Price Each
HK$ 1,806.41
(exc. GST)
units
Per unit
1 - 1
HK$1,806.41
2 - 4
HK$1,770.32
5 - 9
HK$1,605.77
10 - 19
HK$1,445.28
20 +
HK$1,416.39
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