Fuji Electric 2MBi200U4H-120-50, M249 Series IGBT Module, 200 A max, 1200 V, Panel Mount

  • RS Stock No. 168-4619
  • Mfr. Part No. 2MBI200U4H-120-50
  • Manufacturer Fuji Electric
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Transistor Configuration Series
Configuration Series
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type M249
Pin Count 7
Maximum Power Dissipation 1.04 kW
Dimensions 108 x 62 x 30mm
Height 30mm
Length 108mm
Maximum Operating Temperature +150 °C
Width 62mm
Temporarily out of stock - back order for despatch when stock is available
Price Each (In a Box of 10)
HK$ 830.398
(exc. GST)
Per unit
Per Box*
10 +
*price indicative