- RS Stock No.:
- 168-4582
- Mfr. Part No.:
- IXGN320N60A3
- Manufacturer:
- IXYS
On back order for despatch 31/07/2024, delivery within 3 working days
Added
Price Each (In a Tube of 10)
HK$250.796
Units | Per unit | Per Tube* |
10 - 40 | HK$250.796 | HK$2,507.96 |
50 + | HK$245.78 | HK$2,457.80 |
*price indicative |
- RS Stock No.:
- 168-4582
- Mfr. Part No.:
- IXGN320N60A3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 320 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 735 W |
Configuration | Single |
Package Type | SOT-227B |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 4 |
Switching Speed | 5kHz |
Transistor Configuration | Common Emitter |
Dimensions | 38.23 x 25.07 x 9.6mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |