- RS Stock No.:
- 165-5899
- Mfr. Part No.:
- FP15R12W1T4B3BOMA1
- Manufacturer:
- Infineon
On back order for despatch 23/03/2026, delivery within 3 working days
Added
Price Each (In a Tray of 24)
HK$272.85
Units | Per unit | Per Tray* |
24 - 24 | HK$272.85 | HK$6,548.40 |
48 - 72 | HK$264.664 | HK$6,351.936 |
96 + | HK$259.37 | HK$6,224.88 |
*price indicative |
- RS Stock No.:
- 165-5899
- Mfr. Part No.:
- FP15R12W1T4B3BOMA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 28 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 130 W |
Package Type | EASY1B |
Configuration | Common Collector |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 23 |
Switching Speed | 1MHz |
Transistor Configuration | 3 Phase |
Dimensions | 48 x 33.8 x 12mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |