- RS Stock No.:
- 146-1696
- Mfr. Part No.:
- MID200-12A4
- Manufacturer:
- IXYS
Available for back order.
Added
Price Each (In a Box of 2)
HK$1,041.73
Units | Per unit | Per Box* |
2 - 2 | HK$1,041.73 | HK$2,083.46 |
4 - 6 | HK$1,010.48 | HK$2,020.96 |
8 + | HK$980.16 | HK$1,960.32 |
*price indicative |
- RS Stock No.:
- 146-1696
- Mfr. Part No.:
- MID200-12A4
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 270 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Configuration | Single |
Package Type | Y3 DCB |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 5 |
Transistor Configuration | Single |
Dimensions | 110 x 62 x 30mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |