- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Manufacturer:
- IXYS
10 In stock for delivery within 3 working days
Added
Price Each
HK$280.18
Units | Per unit |
1 - 2 | HK$280.18 |
3 - 4 | HK$273.19 |
5 + | HK$268.98 |
- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 320 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 735 W |
Configuration | Single |
Package Type | SOT-227B |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 4 |
Switching Speed | 5kHz |
Transistor Configuration | Common Emitter |
Dimensions | 38.23 x 25.07 x 9.6mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |