- RS Stock No.:
- 124-0710
- Mfr. Part No.:
- MIXA225PF1200TSF
- Manufacturer:
- IXYS
On back order for despatch 04/03/2026, delivery within 3 working days
Added
Price Each
HK$998.97
Units | Per unit |
1 + | HK$998.97 |
- RS Stock No.:
- 124-0710
- Mfr. Part No.:
- MIXA225PF1200TSF
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 360 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 1100 W |
Package Type | SimBus F |
Configuration | Dual |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 11 |
Transistor Configuration | Series |
Dimensions | 152 x 62 x 17mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |