Fuji Electric 7MBR75VB-120-50, M712 3 Phase Bridge IGBT Module, 75 A max, 1200 V, Through Hole

  • RS Stock No. 110-9137
  • Mfr. Part No. 7MBR75VB-120-50
  • Manufacturer Fuji Electric
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules 7-Pack, Fuji Electric

V-Series

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration 3 Phase
Configuration 3 Phase Bridge
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Through Hole
Package Type M712
Pin Count 24
Maximum Power Dissipation 385 W
Dimensions 122 x 62 x 17mm
Height 17mm
Length 122mm
Maximum Operating Temperature +150 °C
Width 62mm
5 In stock for delivery within 3 working days
Price Each
HK$ 1,613.50
(exc. GST)
units
Per unit
1 - 1
HK$1,613.50
2 - 4
HK$1,588.58
5 - 9
HK$1,564.74
10 - 19
HK$1,493.62
20 +
HK$1,464.51
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