IXYS MWI200-06A8, 3 Phase Bridge IGBT Module, 225 A max, 600 V, PCB Mount

  • RS Stock No. 194-912
  • Mfr. Part No. MWI200-06A8
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration 3 Phase
Configuration 3 Phase Bridge
Maximum Continuous Collector Current 225 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type PCB Mount
Pin Count 21
Dimensions 122 x 62 x 17mm
Height 17mm
Length 122mm
Maximum Operating Temperature +125 °C
Width 62mm
Minimum Operating Temperature -40 °C
On back order for despatch 16/09/2020, delivery within 3 working days
Price Each
HK$ 1,250.92
(exc. GST)
units
Per unit
1 - 1
HK$1,250.92
2 - 4
HK$1,202.82
5 - 9
HK$1,179.16
10 - 19
HK$1,139.89
20 +
HK$1,111.02
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