IXYS MUBW15-12A6K, 3 Phase Bridge IGBT Module, 19 A max, 1200 V, PCB Mount

  • RS Stock No. 194-596
  • Mfr. Part No. MUBW15-12A6K
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 19 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type PCB Mount
Pin Count 25
Dimensions 82 x 37.4 x 17.1mm
Height 17.1mm
Length 82mm
Maximum Operating Temperature +125 °C
Width 37.4mm
Minimum Operating Temperature -40 °C
10 In stock for delivery within 3 working days
Price Each
HK$ 328.76
(exc. GST)
Per unit
1 - 4
5 - 9
10 - 19
20 - 49
50 +