The ON Semiconductor NCD57090FDWR2G is a high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp for system design convenience. It has a low Clamp voltage drop that eliminates the need of negative power supply to prevent spurious gate turn−on. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.

It has High peak output current (+6.5 A/−6.5 A)
It provides short propagation delays with accurate matching
It offers IGBT/MOSFET gate clamping during short circuit

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Units	Per unit
10 - 98	HK$19.25
100 - 248	HK$18.85
250 - 498	HK$18.50
500 +	HK$18.10

Select all	Attribute	Value
	Manufacturer	onsemi
	Output Current	6.5 A
	Supply Voltage	22V
	Pin Count	8
	Package Type	SOIC
	Fall Time	13ns
	Driver Type	MOSFET
	Number of Drivers	1

	Select all
	Manufacturer onsemi
	Output Current 6.5 A
	Supply Voltage 22V
	Pin Count 8
	Package Type SOIC
	Fall Time 13ns
	Driver Type MOSFET
	Number of Drivers 1

onsemi NCD57090FDWR2G MOSFET Gate Driver 1, 6.5 A, 22V 8-Pin, SOIC

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