- RS Stock No.:
- 215-5779
- Mfr. Part No.:
- FM24C04B-GTR
- Manufacturer:
- Infineon
- RS Stock No.:
- 215-5779
- Mfr. Part No.:
- FM24C04B-GTR
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.
4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Memory Size | 4kbit |
Organisation | 512 x 8 |
Interface Type | I2C |
Data Bus Width | 8bit |
Maximum Random Access Time | 10ns |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 4.97 x 3.98 x 1.48mm |
Length | 4.97mm |
Maximum Operating Supply Voltage | 5.5 V |
Width | 3.98mm |
Height | 1.48mm |
Maximum Operating Temperature | +85 °C |
Automotive Standard | AEC-Q100 |
Minimum Operating Supply Voltage | 4.5 V |
Number of Bits per Word | 8bit |
Number of Words | 512 |
Minimum Operating Temperature | -40 °C |