Cypress Semiconductor, CY15B108QN-40SXI

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

Low power, 8-Mbit nonvolatilememory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.Unlike serial flash and EEPROM, performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. Offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.

Specifications
Attribute Value
Memory Size 8Mbit
Organisation 1024K x 8 bit
Interface Type Serial-SPI
Data Bus Width 8bit
Maximum Random Access Time 450 (Minimum)µs
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 5.33 x 5.33 x 1.78mm
Length 5.33mm
Width 5.33mm
Maximum Operating Supply Voltage 3.6 V
Height 1.78mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Number of Words 1024K
Minimum Operating Supply Voltage 1.8 V
On back order for despatch 25/11/2020, delivery within 3 working days
Price Each (In a Tube of 94)
Was HK$570.874
HK$ 311.34
(exc. GST)
units
Per unit
Per Tube*
94 - 94
HK$311.34
HK$29,265.96
188 - 188
HK$284.633
HK$26,755.502
282 +
HK$273.016
HK$25,663.504
*price indicative
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