Cypress Semiconductor, FM25L04B-G

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 4kbit
Organisation 512 x 8 bit
Interface Type SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.48mm
Length 4.97mm
Maximum Operating Supply Voltage 3.6 V
Width 3.98mm
Height 1.48mm
Maximum Operating Temperature +85 °C
Automotive Standard AEC-Q100
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 2.7 V
Minimum Operating Temperature -40 °C
Number of Words 512
582 In stock for delivery within 3 working days
Price Each (In a Tube of 97)
HK$ 12.92
(exc. GST)
units
Per unit
Per Tube*
97 - 97
HK$12.92
HK$1,253.24
194 - 194
HK$11.571
HK$1,122.387
291 - 485
HK$11.459
HK$1,111.523
582 - 970
HK$11.19
HK$1,085.43
1067 +
HK$10.898
HK$1,057.106
*price indicative
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