Cypress Semiconductor FM25L16B-DG SPI FRAM Memory, 16kbit 8-Pin DFN

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
No Delay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.6 V
Industrial temperature: -40°C to +85°C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package

Specifications
Attribute Value
Memory Size 16kbit
Organisation 2K x 8 bit
Interface Type SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type DFN
Pin Count 8
Dimensions 4.5 x 4 x 0.7mm
Length 4.5mm
Maximum Operating Supply Voltage 3.6 V
Width 4mm
Height 0.7mm
Maximum Operating Temperature +85 °C
Automotive Standard AEC-Q100
Number of Words 2K
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2.7 V
Number of Bits per Word 8bit
405 In stock for delivery within 3 working days
Price Each (In a Tube of 81)
Was HK$17.804
HK$ 16.655
(exc. GST)
units
Per unit
Per Tube*
81 +
HK$16.655
HK$1,349.055
*price indicative
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