Cypress Semiconductor CY15B104Q-LHXI Serial-SPI FRAM Memory, 4Mbit 8-Pin DFN

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

4-Mbit ferroelectric random access memory (F-RAM) logically
organized as 512 K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 A active current at 1 MHz
100 A (typ) standby current
3 A (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (TDFN) package

Specifications
Attribute Value
Memory Size 4Mbit
Organisation 512 kB x 8
Interface Type Serial-SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type DFN
Pin Count 8
Dimensions 6 x 5 x 0.7mm
Length 6mm
Maximum Operating Supply Voltage 3.6 V
Width 5mm
Height 0.7mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2 V
Number of Words 512K
74 In stock for delivery within 3 working days
Price Each (In a Tube of 74)
HK$ 196.98
(exc. GST)
units
Per unit
Per Tube*
74 +
HK$196.98
HK$14,576.52
*price indicative
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