Cypress Semiconductor FM28V100-TG Parallel FRAM Memory, 1Mbit, 60ns, 2 → 3.6 V 32-Pin TSOP

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 1Mbit
Organisation 128K x 8 bit
Interface Type Parallel
Maximum Random Access Time 60ns
Mounting Type Surface Mount
Package Type TSOP
Pin Count 32
Dimensions 11.9 x 8.1 x 1.05mm
Length 11.9mm
Width 8.1mm
Maximum Operating Supply Voltage 3.6 V
Height 1.05mm
Maximum Operating Temperature +85 °C
Number of Words 128K
Minimum Operating Temperature -40 °C
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 2 V
On back order for despatch 08/11/2019, delivery within 3 working days
Price Each
HK$ 215.38
(exc. GST)
units
Per unit
1 - 9
HK$215.38
10 - 49
HK$200.56
50 - 99
HK$193.47
100 - 499
HK$169.15
500 +
HK$159.65
Packaging Options:
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