Cypress Semiconductor FM25L04B-G SPI FRAM Memory, 4kbit, 2.7 → 3.6 V 8-Pin SOIC

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 4kbit
Organisation 512 x 8 bit
Interface Type SPI
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.48mm
Length 4.97mm
Maximum Operating Supply Voltage 3.6 V
Width 3.98mm
Height 1.48mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2.7 V
Number of Words 512
605 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
Was HK$14.55
HK$ 12.072
(exc. GST)
units
Per unit
Per Pack*
5 - 5
HK$12.072
HK$60.36
10 - 20
HK$11.03
HK$55.15
25 - 95
HK$10.456
HK$52.28
100 - 495
HK$9.566
HK$47.83
500 +
HK$8.954
HK$44.77
*price indicative
Packaging Options:
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