Cypress Semiconductor FM24C04B-G Serial-2 Wire, Serial-I2C FRAM Memory, 4kbit, 4.5 → 5.5 V 8-Pin SOIC

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 4kbit
Organisation 512 x 8 bit
Interface Type Serial-2 Wire, Serial-I2C
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.48mm
Length 4.97mm
Width 3.98mm
Maximum Operating Supply Voltage 5.5 V
Height 1.48mm
Maximum Operating Temperature +85 °C
Number of Words 512
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 4.5 V
335 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
HK$ 12.094
(exc. GST)
units
Per unit
Per Pack*
5 - 5
HK$12.094
HK$60.47
10 - 20
HK$11.082
HK$55.41
25 - 95
HK$10.772
HK$53.86
100 - 495
HK$9.578
HK$47.89
500 +
HK$9.276
HK$46.38
*price indicative
Packaging Options:
Related Products
A range of advanced Smart Power Modules from ...
Description:
A range of advanced Smart Power Modules from Fairchild Semiconductor which provide compact high performance solutions for many inverter motor drive applications. The modules integrate optimized gate drive for the built-in power MOSFETs to minimize EMI and losses and also ...
The Intelligent Power Module (IPM) is a fully ...
Description:
The Intelligent Power Module (IPM) is a fully integrated three phase inverter power stage. It is best suited for driving permanent magnet synchronous motors (PMSM), brushless-DC (BLDC) motors and AC asynchronous motors. 3-Phase IGBT Motor Drive module with integrated driversThree ...
A range of advanced Smart Power Modules from ...
Description:
A range of advanced Smart Power Modules from Fairchild Semiconductor which provide compact high performance solutions for many inverter motor drive applications. The modules integrate optimized gate drive for the built-in power MOSFETs to minimize EMI and losses and also ...
The PWD13F60 is a high-density power driver integrating ...
Description:
The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate ...