Cypress Semiconductor FM22L16-55-TG Parallel FRAM Memory, 4Mbit, 55ns, 2.7 → 3.6 V 44-Pin TSOP

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 4Mbit
Organisation 256K x 16 bit
Interface Type Parallel
Maximum Random Access Time 55ns
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Dimensions 18.51 x 10.26 x 1.04mm
Length 18.51mm
Width 10.26mm
Maximum Operating Supply Voltage 3.6 V
Height 1.04mm
Maximum Operating Temperature +85 °C
Number of Words 256K
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2.7 V
Number of Bits per Word 16bit
350 In stock for delivery within 3 working days
Price Each
HK$ 314.21
(exc. GST)
units
Per unit
1 - 9
HK$314.21
10 - 49
HK$291.40
50 - 99
HK$272.82
100 - 499
HK$239.40
500 +
HK$239.19
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