Cypress Semiconductor FM25V02A-G SPI FRAM Memory, 256kbit, 2 → 3.6 V 8-Pin SOIC

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 256kbit
Organisation 32K x 8 bit
Interface Type SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.47mm
Length 4.97mm
Width 3.98mm
Maximum Operating Supply Voltage 3.6 V
Height 1.47mm
Maximum Operating Temperature +85 °C
Number of Words 32K
Minimum Operating Temperature -40 °C
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 2 V
186 In stock for delivery within 3 working days
Price Each (In a Pack of 2)
HK$ 57.08
(exc. GST)
units
Per unit
Per Pack*
2 - 8
HK$57.08
HK$114.16
10 - 18
HK$49.625
HK$99.25
20 - 98
HK$46.445
HK$92.89
100 - 498
HK$43.315
HK$86.63
500 +
HK$40.335
HK$80.67
*price indicative
Packaging Options: